| PART |
Description |
Maker |
| SBW13009 |
130W Bipolar Junction Transistor, 12A Ic, 400V Vceo, 700V Vces
High Voltage Fast-Switching NPN Power Transistor
|
SEMIWELL[SemiWell Semiconductor]
|
| 2SA18621 2SA2072 2SA1862 |
High-voltage Switching Transistor (?400V, ?2A)
High-voltage Switching Transistor (−400V, −2A)
High voltage discharge, High speed switching, Low Noise (?60V, ?3A)
|
ROHM[Rohm]
|
| 2SA1201 |
High Voltage : VCEO = -120V High Transition Frequency : fT = 120MHz(typ.)
|
TY Semiconductor Co., Ltd
|
| 2SC1653 |
High DC current gain.hFE=130 typ.(VCE=3.0V,IC=15mA) High voltage VCEO : 130V
|
TY Semiconductor Co., Ltd
|
| 2SA1587 |
High voltage VCEO=-120V High hFE hFE=200 to 700 Small package
|
TY Semiconductor Co., Ltd
|
| KTC4372 |
High Voltage: VCEO=150V
|
TY Semiconductor Co., L...
|
| 2SD1821 |
High collector-emitter voltage VCEO Low noise voltage NV
|
TY Semiconductor Co., Ltd
|
| HDMP-1014 HDMP-1012 |
Bipolar Transistor; Collector Emitter Voltage, Vceo:400V; Transistor Polarity:N Channel; Power Dissipation:250W; C-E Breakdown Voltage:400V; DC Current Gain Min (hfe):10; Collector Current:50A; Package/Case:TO-3
Phase Lock Loop (PLL) IC; Number of Circuits:1; Package/Case:14-DIP; Mounting Type:Through Hole 4Low成本千兆速率发接收芯片
|
Agilent(Hewlett-Packard)
|
| CTN391 |
0.750W High Voltage NPN Plastic Leaded Transistor. 200V Vceo, 0.500A Ic, 25 hFE.
|
Continental Device India Limited
|
| SMLA42CSM |
SILICON NPN HIGH VOLTAGE TRANSISTOR IN CERAMIC SURFACE MOUNT PACKAGE
Silicon NPN High Voltage Transistor In Ceramic Surface Mount (Vcbo:300V,Vceo:300V,Vebo:6V)(N沟道增强高电压功率MOS场效应管(Vcbo:300V,Vceo:300V,Vebo:6V)) 高压硅npn型晶体管在陶瓷表面贴装（Vcbo00V，Vceo00V，Vebo6V的）（不适用沟道增强型，高电压功率马鞍山场效应管（Vcbo00V，Vceo00V，Vebo6V的）
|
SemeLAB
SEME-LAB[Seme LAB]
Motorola Mobility Holdings, Inc.
|
| 2SC4505 |
High breakdown voltage. (BVCEO = 400V) Low saturation voltage
|
TY Semiconductor Co., Ltd
|
| 2SA1923 |
High Voltage:VCBO=-400V Low Saturation Voltage:VCE(sat)=-1V(Max.)
|
TY Semiconductor Co., Ltd
|
